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1N6280HE3 PDF预览

1N6280HE3

更新时间: 2024-11-08 07:51:19
品牌 Logo 应用领域
威世 - VISHAY 二极管瞬态抑制器
页数 文件大小 规格书
7页 118K
描述
Trans Voltage Suppressor Diode, 1500W, 19.4V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN

1N6280HE3 数据手册

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1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303  
Vishay General Semiconductor  
TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 1500 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty cycle):  
0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Solder Dip 260 °C, 40 seconds  
Case Style 1.5KE  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VBR uni-directional  
6.8 V to 540 V  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive and  
telecommunication.  
V
BR bi-directional  
6.8 V to 440 V  
1500 W  
6.5 W  
PPPM  
PD  
I
FSM (uni-directional only)  
TJ max.  
200 A  
175 °C  
MECHANICAL DATA  
Case: Molded epoxy body over passivated junction  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional types, use  
(e.g. 1.5KE440CA).  
C
or CA suffix  
Electrical characteristics apply in both directions.  
Polarity: For uni-directional types the color band  
denotes cathode end, no marking on bi-directional  
types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
LIMIT  
1500  
UNIT  
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)  
PPPM  
W
Peak pulse current with a 10/1000 µs waveform (1)  
IPPM  
PD  
See next table  
A
W
A
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5)  
6.5  
200  
(2)  
IFSM  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only  
Maximum instantaneous forward voltage at 100 A for uni-directional only (3)  
Operating junction and storage temperature range  
VF  
3.5/5.0  
V
TJ, TSTG  
- 55 to + 175  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3) VF = 3.5 V for 1.5KE220 (A) and below; VF = 5.0 V for 1.5KE250(A) and above  
www.vishay.com  
106  
Document Number: 88301  
Revision: 20-Sep-07  

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