是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | O-PALF-W2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.08 |
Is Samacsys: | N | 其他特性: | EXCELLENT CLAMPING CAPABILITY |
最大击穿电压: | 26.4 V | 最小击穿电压: | 21.6 V |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-PALF-W2 | JESD-609代码: | e3 |
最大非重复峰值反向功率耗散: | 1500 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT APPLICABLE | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 6.5 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 19.4 V | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | MATTE TIN |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT APPLICABLE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N6280-E3/93 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 19.4V V(RWM), Unidirectional, 1 Element, Silicon, P | |
1N6280E3/TR12 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 19.4V V(RWM), Unidirectional, | |
1N6280E3/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 19.4V V(RWM), Unidirectional, | |
1N6280E3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 19.4V V(RWM), Unidirectional, 1 Element, Silicon, P | |
1N6280HE3 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 19.4V V(RWM), Unidirectional, 1 Element, Silicon, R | |
1N6280L | EIC |
获取价格 |
TRANSIENT VOLTAGE SUPPRESSOR | |
1N6280-T | DIODES |
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Trans Voltage Suppressor Diode, 1500W, 19.4V V(RWM), Unidirectional, 1 Element, Silicon | |
1N6280-TP | MCC |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 19.4V V(RWM), Unidirectional, 1 Element, Silicon, D | |
1N6280TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 19.4V V(RWM), Unidirectional, 1 Element, Silicon, P | |
1N6280US | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, MELF-2 |