Datasheet > 1N5819_10

1N5819_10

更新时间： 2024-02-23 13:15:21

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	69K
描述
1 AMP SCHOTTKY BARRIER RECTIFIER CHIP

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中文翻译

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数据手册

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1N5819_10 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

– 1 AMP SCHOTTKY BARRIER RECTIFIER CHIP

– COMPATIBLE WITH ALL WIRE BONDING AND DIE

ATTACH TECHINIQUES, WITH THE EXCEPTION

OF SOLDER RELOW

Qualified per MIL-PRF-19500/586

DEVICE

QUALIFIED LEVELS

JANHCA

1N5819

JANKCA

MAXIMUM RATING AT 25°C

Operating Temperature:

-55°C to +110°C

Storage Temperature:

-55°C to +150°C

Average Rectified Forward Current:

1.0 AMP @ T_L+55°C

ANODE

ELECTRICAL CHARACTERISTICS (T_A= 25°C, unless otherwise specified)

WORKING

PEAK

REVERSE

VOLTAGE

MAXIMUM

REVERSE LEAKAGE

CURRENT AT

TYPE

NUMBER

MAXIMUM FORWARD

VOLTAGE

RATED VOLTAGE

V_RWM

VOLTS

V_F@ 0.1A V_F@ 1.0A V_F@ 3.1A

I_R@ 25°C

I_R@ 100°C

37 MIL SQUARE

VOLTS

0.34

VOLTS

0.49

VOLTS

0.8

1N5819

0.050

5.0

LDS-0180 Rev. 1 (101290)

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与1N5819_10相关器件

型号	品牌	获取价格	描述	数据表
1N5819_15	UTC	获取价格	SCHOTTKY BARRIER DIODE
1N5819-1	SENSITRON	获取价格	HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER
1N5819-1_08	SENSITRON	获取价格	HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE
1N5819-13	DIODES	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
1N5819143	NXP	获取价格	DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, Signal Diode
1N5819-1A-DO-41	DGNJDZ	获取价格	1.0 AMP SCHOTTKY BARRIER RECTIFIERS
1N5819-1V	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, HERMETIC SEALED PACKAGE-2
1N5819-1X	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, HERMETIC SEALED PACKAGE-2
1N5819A-G	COMCHIP	获取价格	Schottky Barrier Rectifiers
1N5819-B	WTE	获取价格	1.0A SCHOTTKY BARRIER RECTIFIER