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1N5819-E3 PDF预览

1N5819-E3

更新时间: 2024-02-01 17:48:36
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 389K
描述
DIODE 1 A, 40 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode

1N5819-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5
其他特性:FREE WHEELING DIODE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.6 V
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:25 A
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:END处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

1N5819-E3 数据手册

 浏览型号1N5819-E3的Datasheet PDF文件第2页浏览型号1N5819-E3的Datasheet PDF文件第3页浏览型号1N5819-E3的Datasheet PDF文件第4页浏览型号1N5819-E3的Datasheet PDF文件第5页 
1N5817 thru 1N5819  
Vishay General Semiconductor  
Schottky Barrier Rectifiers  
FEATURES  
• Guardring for overvoltage protection  
• Very small conduction losses  
• Extremely fast switching  
• Low forward voltage drop  
• High frequency operation  
• Solder dip 260 °C, 40 s  
DO-204AL (DO-41)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, dc-to-dc converters, and polarity  
protection applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
VRRM  
IFSM  
20 V, 30 V, 40 V  
25 A  
MECHANICAL DATA  
Case: DO-204AL (DO-41)  
VF  
0.45 V, 0.55 V, 0.60 V  
125 °C  
Epoxy meets UL 94V-0 flammability rating  
TJ max.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VRRM  
VRMS  
1N5817  
20  
1N5818  
30  
1N5819  
40  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
V
14  
21  
28  
Maximum DC blocking voltage  
Maximum non-repetitive peak reverse voltage  
VDC  
20  
30  
40  
VRSM  
24  
36  
48  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TL = 90 °C  
IF(AV)  
1.0  
25  
A
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
Voltage rate of change (rated VR)  
Storage temperature range  
dV/dt  
10 000  
V/µs  
°C  
TJ, TSTG  
- 65 to + 125  
Document Number: 88525  
Revision: 20-Aug-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
43  

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