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1N5819G PDF预览

1N5819G

更新时间: 2024-11-01 04:24:43
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管瞄准线
页数 文件大小 规格书
7页 76K
描述
Axial Lead Rectifiers

1N5819G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:DO-41包装说明:O-PALF-W2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:1 week风险等级:0.35
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:224258Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Diodes, Axial Diameter Horizontal Mounting
Samacsys Footprint Name:AXIAL-LEAD-CASE 59-10Samacsys Released Date:2016-03-17 18:36:43
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.34 VJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:25 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

1N5819G 数据手册

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1N5817, 1N5818, 1N5819  
1N5817 and 1N5819 are Preferred Devices  
Axial Lead Rectifiers  
This series employs the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State−of−the−art geometry features  
chrome barrier metal, epitaxial construction with oxide passivation  
and metal overlap contact. Ideally suited for use as rectifiers in  
low−voltage, high−frequency inverters, free wheeling diodes, and  
polarity protection diodes.  
http://onsemi.com  
Features  
SCHOTTKY BARRIER  
RECTIFIERS  
Extremely Low V  
F
Low Stored Charge, Majority Carrier Conduction  
Low Power Loss/High Efficiency  
These are Pb−Free Devices*  
1.0 AMPERE  
20, 30 and 40 VOLTS  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 0.4 Gram (Approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
Lead Temperature for Soldering Purposes:  
260°C Max for 10 Seconds  
AXIAL LEAD  
CASE 59  
STYLE 1  
Polarity: Cathode Indicated by Polarity Band  
ESD Ratings: Machine Model = C (>400 V)  
Human Body Model = 3B (>8000 V)  
MARKING DIAGRAM  
A
1N581x  
YYWWG  
G
A
=Assembly Location  
1N581x =Device Number  
x= 7, 8, or 9  
YY  
WW  
G
=Year  
=Work Week  
=Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 6 of  
this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 10  
1N5817/D  

1N5819G 替代型号

型号 品牌 替代类型 描述 数据表
1N5819RLG ONSEMI

完全替代

Axial Lead Rectifiers
1N5819RL ONSEMI

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Axial Lead Rectifiers
1N5819 ONSEMI

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Axial Lead Rectifiers

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