Datasheet > 1N5819G-B

1N5819G-B

更新时间： 2024-02-02 10:36:18

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	118K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5819G-B 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

1N5817G

THRU

1N5819G

Micro Commercial Components

Features

Metal silicon junction, majority carrier conduction

1.0 Amp Schottky

Barrier Rectifier

20 to 40 Volts

For surface mount application

Low power loss, high efficiency

High current capability, low forward voltage drop.

High surge capability

For use in low voltage, high frequency inverters, free wheeling,

and polarity protection applications.

High temperature soldering guaranteed: 250°C/10 seconds at

terminals

DO-41G

Maximum Ratings

Case: Molded Glass Body

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Typical Thermal Resistance; 30°C/W Junction To Lead

75°C/W Junction To Ambient

Maximum

Recurrent

Peak Reverse

Voltage

Maximum DC

Blocking

MCC

Part Number

Maximum

RMS Voltage

Voltage

Cathode

Mark

1N5817G

1N5818G

1N5819G

20V

30V

40V

14V

21V

28V

20V

30V

40V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

1.0A

T_A= 25°C*

Peak Forward Surge

Current

I_FSM

30A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

I_R

0.5V

I_FM= 1.0A;

T_J= 25°C*

DIMENSIONS

INCHES

M M

DIM

NOTE

MIN

MAX

0.205

0.107

0.034

-----

MIN

4.10

2.00

0.70

MAX

7.60

3.60

0.90

-----

1.0mA T_J= 25°C

10mA

0.166

0.080

0.026

1.000

T_J= 125°C

Diameter

Typical Junction

Capacitance

C_J

110pF

Measured at

1.0MHz, V_R=4.0V

25.40

*Pulse test: Pulse width 300 msec, Duty cycle 1%

www.mccsemi.com

Revision: 3

2002/12/31

中文翻译

下载PDF

与1N5819G-B相关器件

型号	品牌	获取价格	描述	数据表
1N5819G-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, GLASS, DO-41G, 2 PIN
1N5819G-CA2-R	UTC	获取价格	SCHOTTKY BARRIER DIODE
1N5819G-CA2S-R	UTC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, HALOGEN AND LEAD FREE PACKA
1N5819GE3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, GLASS, DO-41G, 2 PIN
1N5819GP	CHENMKO	获取价格	Rectifier Diode,
1N5819G-T	MCC	获取价格	Rectifier Diode,
1N5819G-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, GLASS, DO-41G, 2 PIN
1N5819H	PANJIT	获取价格	SCHOTTKY BARRIER RECTIFIERS
1N5819H02-2	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41
1N5819H02-4	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41