Datasheet > 1N5819FW

1N5819FW

更新时间： 2023-12-06 20:08:13

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
4页	187K
描述
肖特基二极管

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中文翻译

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1N5819FW 数据手册

1N5817FW THRU 1N5819FW

Surface Mount Schottky Barrier Rectifiers

Reverse Voltage - 20 to 40 V

Forward Current - 1 A

PINNING

DESCRIPTION

Cathode

Anode

Top View

Simplified outline SOD-123FL and symbol

Absolute Maximum Ratings and Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive load. For

capacitive load, derate by 20%

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Symbols

V_RRM

V_RMS

Units

1N5817FW 1N5818FW 1N5819FW

Maximum DC Blocking Voltage

V_DC

Maximum Average Forward Rectified Current

I_F(AV)

Peak Forward Surge Current 8.3 ms Single Half Sine Wave

Superimposed on Rated Load(JEDEC methode)

I_FSM

V_F

I_R

Maximum Instantaneous Forward Voltage

at I_F= 1 A

at I_F= 3 A

0.45

0.75

0.55

0.875

0.6

0.9

T_J= 25℃

T_J= 100℃

Maximum Instantaneous Reverse Current at

Rated DC Blocking Voltage ¹⁾

0.5

Typical Junction Capacitance ²⁾

C_J

R_θJA

T_j

110

℃/W

℃

Typical Thermal Resistance, Junction to Ambient ³⁾

Operating Junction Temperature Range

Storage Temperature Range

- 55 to + 125

- 55 to + 150

℃

T_stg

¹⁾Pulse test: 300 µs pulse width, 1% duty cycle.

²⁾Mearsured at 1 MHz and reverse voltage of 4 V.

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

1 / 4

Dated: 09/11/2022 Rev: 03

12 3 4

中文翻译

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与1N5819FW相关器件

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1N5819G-B	MCC	获取价格	暂无描述
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