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1N5819-E PDF预览

1N5819-E

更新时间: 2024-09-26 12:52:07
品牌 Logo 应用领域
乐山 - LRC 二极管
页数 文件大小 规格书
7页 182K
描述
Schottky Barrier Rectifiers Reverse Voltage 20 to 40V Forward Current 1.0A

1N5819-E 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.75
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.55 V
最大非重复峰值正向电流:25 A元件数量:1
最高工作温度:150 °C最大输出电流:1 A
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
Base Number Matches:1

1N5819-E 数据手册

 浏览型号1N5819-E的Datasheet PDF文件第2页浏览型号1N5819-E的Datasheet PDF文件第3页浏览型号1N5819-E的Datasheet PDF文件第4页浏览型号1N5819-E的Datasheet PDF文件第5页浏览型号1N5819-E的Datasheet PDF文件第6页浏览型号1N5819-E的Datasheet PDF文件第7页 
1N5817-E thru 1N5819-E  
Schottky Barrier Rectifiers  
Reverse Voltage 20 to 40V Forward Current 1.0A  
Feature & Dimensions  
* Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
* Low power loss,high efficiency  
* For use in low voltage high frequency inverters,  
free wheeling,and polarity protection applications  
* Guarding for over voltage protection  
* High temperature soldering guaranteed:  
260°C/10 seconds at terminals  
* IEC61000-4-2 ESD Air Contact≥±15KV  
Mechanical Data  
Case: JEDEC DO-41, molded plastic over glass body  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: 0.011 oz., 0.284 g  
We declare that the material of product compliance  
with ROHS requirements  
Handling precautin:None  
1.Maximum & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
1N5817-E  
1N5818-E  
1N5819-E  
Parameter Symbol  
symbol  
Unit  
1N5817  
ESD  
1N5818  
ESD  
1N5819  
ESD  
device marking code  
VRRM  
VRSM  
VDC  
20  
14  
20  
30  
21  
30  
40  
28  
40  
Maximum repetitive peak reverse voltage  
Maximum RSM voltage  
V
V
V
Maximum DC blocking voltage  
Maximum average forward rectified current  
0.375" (9.5mm) lead length (See fig. 1)  
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
Typical thermal resistance (Note 1)  
1.0  
25  
IF(AV)  
IFSM  
A
A
50  
RθJA  
TJ  
TSTG  
°C/W  
°C  
°C  
40 to +150  
40 to +175  
Operating temperature range  
storage temperature range  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
1N5817-E  
1N5818-E  
1N5819-E  
Parameter Symbol  
symbol  
Unit  
V
VF  
0.45  
0.55  
Maximum instantaneous forward voltage at 1.0A  
1.0  
10  
110  
Maximum DC reverse current TA = 25°C  
at rated DC blocking voltage TA = 100°C  
Typical junction capacitance at 4.0V, 1MHz  
NOTES:  
IR  
mA  
PF  
CJ  
1. Thermal resistance from junction to ambient at 0.375(9.5mm) lead length, P.C.B. mounted  

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