生命周期: | Obsolete | 包装说明: | O-LALF-W2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.17 | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-LALF-W2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最大输出电流: | 1 A |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 认证状态: | Not Qualified |
最大反向恢复时间: | 2 µs | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | WIRE |
端子位置: | AXIAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5619 | NJSEMI |
获取价格 |
RECTIFIERS Fast Recovery, 1 Amp | |
1N5619 | SEMTECH |
获取价格 |
RECTIFIER, up to 1kV, 2A, 150-500ns | |
1N5619 | MICROSEMI |
获取价格 |
MILITARY RECTIFIERS | |
1N5619 | VISHAY |
获取价格 |
GLASS PASSIVATED FAST SWITCHING RECTIFIER | |
1N5619 | SENSITRON |
获取价格 |
HERMETIC AXIAL LEAD/MELF RECTIFIER | |
1N5619 | CENTRAL |
获取价格 |
1A,600V Through-Hole Rectifier-Fast Recovery <500ns Single | |
1N5619BK | CENTRAL |
获取价格 |
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon | |
1N5619GP | VISHAY |
获取价格 |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER | |
1N5619GP/100 | VISHAY |
获取价格 |
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN | |
1N5619GP/100-E3 | VISHAY |
获取价格 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode |