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1N5619BK PDF预览

1N5619BK

更新时间: 2024-10-30 14:47:03
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
1页 28K
描述
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon

1N5619BK 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.12Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:E-PALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ELLIPTICAL封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.25 µs表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N5619BK 数据手册

  

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