1N5619GP

更新时间： 2024-11-24 22:34:59

品牌	Logo	应用领域
威世 - VISHAY		二极管开关
页数	文件大小	规格书
2页	66K
描述
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

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中文翻译

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技术参数
数据手册

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1N5619GP 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.91
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.2 V	元件数量：	1
最高工作温度：	175 °C	最大输出电流：	1 A
最大重复峰值反向电压：	600 V	最大反向恢复时间：	0.25 µs
子类别：	Rectifier Diodes	表面贴装：	NO
Base Number Matches：	1

1N5619GP 数据手册

1N5615GP THRU 1N5623GP

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

Reverse Voltage - 200 to 1000 Volts

Forward Current - 1.0 Ampere

DO-204AC

FEATURES

♦ Plastic package has

Underwriters Laboratory

0.034 (0.86)

0.028 (0.71)

Flammability Classification 94V-0

♦ High temperature metallurgically

bonded construction

1.0

(25.4)

MIN.

DIA.

♦ Glass passivated cavity-free junction

♦ Capable of meeting environmental standards of

MIL-S-19500

0.300 (7.6)

0.230 (5.8)

♦ Fast switching for high efficiency

0.140 (3.6)

0.104 (2.6)

♦ 1.0 Ampere operation at T =55°C with no thermal

DIA.

runaway

1.0

(25.4)

MIN.

♦ High temperature soldering guaranteed:

350°C/10seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

Dimensions in inches and (millimeters)

*Glass-plastic encapsulation technique is covered by

MECHANICAL DATA

Case: JEDEC DO-204AC molded plastic over glass body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.015 ounce, 0.4 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

V_RRM

V_RMS

V_DC

5615GP

5617GP

5619GP

5621GP

5623GP

UNITS

Volts

Amps

* Maximum repetitive peak reverse voltage

* Maximum RMS voltage

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

* Maximum DC blocking voltage

1000

* Maximum average forward rectified current

0.375" (9.5mm) lead length at T_A=55°C

I_(AV)

1.0

Amp

* Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

I_FSM

50.0

1.2

Amps

Maximum instantaneous forward voltage at 1.0A

V_F

I_R

Volts

Maximum DC reverse current

at rated DC blocking voltage

T_A=25°C

T_A=100°C

0.5

25.0

µA

*Maximum reverse recovery time _{(NOTE 1)}

Typical junction capacitance _{(NOTE 2)}

t_rr

C_J

150

250

25.0

300

500

Typical thermal resistance _{(NOTE 3)}

R_ΘJA

T_J,T_STG

45.0

°C/W

°C

* Operating junction and storage temperature range

-65 to +175

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, I_rr=0.25A

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted

* JEDEC registered values

4/98

中文翻译

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与1N5619GP相关器件

型号	品牌	获取价格	描述	数据表
1N5619GP/100	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5619GP/100-E3	VISHAY	获取价格	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5619GP/4E-E3	VISHAY	获取价格	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5619GP/4G	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5619GP/4G-E3	VISHAY	获取价格	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5619GP/51	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5619GP/51-E3	VISHAY	获取价格	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5619GP/54	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5619GP/54-E3	VISHAY	获取价格	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5619GP/56	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

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