Datasheet > 1N5619GP/54-E3

1N5619GP/54-E3

更新时间： 2024-10-31 04:56:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	324K
描述
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5619GP/54-E3 数据手册

1N5615GP thru 1N5623GP

Vishay General Semiconductor

Glass Passivated Junction Fast Switching Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

1.0 A

200 V to 1000 V

50 A

150 ns, 250 ns, 300 ns, 500 ns

I_R

0.5 µA

1.2 V

V_F

T_jmax.

175 °C

DO-204AC (DO-15)

* Glass-plastic encapsulation

technique is covered by

Patent No. 3,996,602, and

brazed-lead assembly

by Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for High Reliability

condition

Case: DO-204AC, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Cavity-free glass-passivated junction

• Fast switching for high efficiency

• Low leakage current

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in fast switching rectification of power supply,

inverters, converters and freewheeling diodes for

consumer, automotive and Telecommunication

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbols 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP

Units

Maximum repetitive peak reverse voltage

V_RRM

_RMS

200

140

200

400

280

400

600

420

600

1.0

800

560

800

1000

700

Maximum RMS voltage

Maximum DC blocking voltage

V_DC

1000

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_A= 55 °C

I_F(AV)

Peak forward surge current 8.3 ms single

half sine-wave superimposed on rated load

I_FSM

Operating junction and storage

temperature range

T_J,T_STG

- 65 to + 175

°C

Document Number 88522

19-Sep-05

www.vishay.com

12 3 4

中文翻译

下载PDF

与1N5619GP/54-E3相关器件

型号	品牌	获取价格	描述	数据表
1N5619GP/56	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5619GP/56-E3	VISHAY	获取价格	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5619GP/58	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5619GP/62	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5619GP/62-E3	VISHAY	获取价格	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5619GP/64-E3	VISHAY	获取价格	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5619GP/65	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5619GP/65-E3	VISHAY	获取价格	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
1N5619GP/66	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
1N5619GP/68-E3	VISHAY	获取价格	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

与1N5619GP/54-E3相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

19
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

20
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

52

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5619GP/54-E3

1N5619GP/54-E3 数据手册

与1N5619GP/54-E3相关器件

与1N5619GP/54-E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5619GP/54-E3

1N5619GP/54-E3 数据手册

与1N5619GP/54-E3相关器件

与1N5619GP/54-E3相关文章

您还可以找

您在本页遇到什么问题？