是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-213AA |
包装说明: | R-LELF-R2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.46 |
其他特性: | METALLURGICALLY BONDED | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | ZENER DIODE | JEDEC-95代码: | DO-213AA |
JESD-30 代码: | R-LELF-R2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | GLASS | 封装形状: | RECTANGULAR |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 0.5 W |
认证状态: | Not Qualified | 标称参考电压: | 9.1 V |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | TIN LEAD | 端子形式: | WRAP AROUND |
端子位置: | END | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
最大电压容差: | 1% | 工作测试电流: | 1 mA |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5529DURE3TR | MICROSEMI |
获取价格 |
Zener Diode, 9.1V V(Z), 1%, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL | |
1N5529DURTR-1 | MICROSEMI |
获取价格 |
Low Voltage Surface Mount 500 mW Avalanche Diodes | |
1N5529TR-1 | MICROSEMI |
获取价格 |
Low Voltage Surface Mount 500 mW Avalanche Diodes | |
1N5529UR | MICROSEMI |
获取价格 |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW | |
1N5529UR-1 | MICROSEMI |
获取价格 |
Low Voltage Surface Mount 500 mW Avalanche Diodes | |
1N5529UR-1E3 | MICROSEMI |
获取价格 |
Zener Diode, 9.1V V(Z), 20%, 0.5W, Silicon, Unidirectional, DO-213AA, ROHS COMPLIANT, HERM | |
1N5529UR-1E3TR | MICROSEMI |
获取价格 |
Zener Diode, 9.1V V(Z), 20%, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, ML | |
1N5529UR-1TR | MICROSEMI |
获取价格 |
暂无描述 | |
1N5529URE3 | MICROSEMI |
获取价格 |
Zener Diode, 9.1V V(Z), 20%, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, ML | |
1N5529URE3TR | MICROSEMI |
获取价格 |
Zener Diode, 9.1V V(Z), 20%, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, ML |