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1N5407-T PDF预览

1N5407-T

更新时间: 2024-11-01 20:25:07
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
3页 95K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

1N5407-T 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DO-201AD
包装说明:R-PALF-W2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:7.51
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-201AD
JESD-30 代码:R-PALF-W2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:LONG FORM峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:800 V
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

1N5407-T 数据手册

 浏览型号1N5407-T的Datasheet PDF文件第2页浏览型号1N5407-T的Datasheet PDF文件第3页 
NOT RECOMMENDED FOR NEW DESIGN  
USE S3A-S3M Series  
1N5400 - 1N5408  
3.0A RECTIFIER  
Features  
Diffused Junction  
High Current Capability and Low Forward Voltage Drop  
Surge Overload Rating to 200A Peak  
Low Reverse Leakage Current  
Lead Free Finish, RoHS Compliant (Note 3)  
Mechanical Data  
Case: DO-201AD  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
SMB  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish Tin. Plated Leads Solderable per MIL-  
STD-202, Method 208  
Polarity: Cathode Band  
Marking: Type Number  
Weight: 1.1 grams (approximate)  
Dim  
A
Min  
25.4  
7.20  
1.20  
4.80  
Max  
-
B
9.50  
1.30  
5.30  
C
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N  
5400  
1N  
5401  
1N  
5402  
1N  
5404  
1N  
5406  
1N  
5407  
1N  
5408  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
280  
3.0  
V
A
VR(RMS)  
Average Rectified Output Current  
@ TA = 105C  
IO  
(Note 1)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
Forward Voltage  
Peak Reverse Current  
at Rated DC Blocking Voltage  
Typical Total Capacitance  
200  
1.0  
A
V
IFSM  
VFM  
IRM  
CT  
@ IF = 3.0A  
@ TA = 25C  
@ TA = 150C  
(Note 2)  
10  
100  
A  
50  
25  
pF  
°C/W  
C  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
15  
R  
JA  
-65 to +150  
Tj, TSTG  
Notes:  
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.  
1 of 3  
September 2014  
© Diodes Incorporated  
1N5400-1N5408  
Document number: DS28007 Rev. 8 - 3  
www.diodes.com  

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