Datasheet > 1N5408

1N5408

更新时间： 2024-11-23 07:22:31

品牌	Logo	应用领域
平盛电子 - PFS		二极管
页数	文件大小	规格书
2页	162K
描述
AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER

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中文翻译

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数据手册

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1N5408 数据手册

AXIAL SILASTIC GUARD JUNCTION STANDARD RECTIFIER

VOLTAGE RANGE

CURRENT

50 to 1000 Volts

3.0 Ampere

1N5400 THRU 1N5408

DO-27

FEATURES

Low coat construction

1.0(25.4)

MIN.

Low forward voltage drop

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

260℃/10 secods/.375”(9.5mm)lead length at 5 lbs(2.3kg) tension

.375(9.5)

.335(8.5)

MECHANICAL DATA

.220(5.6)

.197(5.0)

DIA.

Case: Transfer molded plastic

Epoxy: UL94V-O rate flame retardant

Polarity: Color band denotes cathode end

Lead: Plated axial lead, solderable per MIL-STD-202E method 208C

Mounting position: Any

1.0(25.4)

MIN.

.052(1.3)

.048(1.2)

DIA.

Weight: 0.042 ounce, 1.19 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^OC ambient temperature unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load

For capacitive load derate current by 20%

SYMBOLS

UNIT

Volts

1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Current

0.375”(9.5mm) lead length at T_A= 75℃

I_(AV)

3.0

Amps

Peak Forward Surge Current

8.3mS single half sine wave superimposed on

rated load (JEDEC method)

I_FSM

V_F

I_R

125

Amps

Volts

µA

Maximum Instantaneous Forward Voltage @ 3.0A

1.0

5.0

500

T_A= 25℃

T_A= 150℃

Maximum DC Reverse Current at Rated

DC Blocking Voltage per element

Maximum Full Load Reverse Current, full cycle average

0.375”(9.5mm)lead length at T_L=75℃

I_R(AV)

C_J

500

µA

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

R_θJA

℃/W

Operating Junction Temperature Range

Storage Temperature Range

Notes:

℃

T_J

-55 to +150

T_STG

1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.

2. Thermal Resistance from junction to ambient at 0.375”(9.5mm) lead length, P.C.board mounted with 0.8”×0. 8”(20×

20mm) copper heat si nk.

Web Site:

WWW.PS-PFS.COM

中文翻译

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与1N5408相关器件

型号	品牌	获取价格	描述	数据表
1N5408(G)	LGE	获取价格	普通整流二极管
1N5408/1	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-
1N5408/100	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-
1N5408/100-E3	VISHAY	获取价格	DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5408/4E-E3	VISHAY	获取价格	DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5408/4F-E3	VISHAY	获取价格	DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5408/4G	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-
1N5408/54-E3	VISHAY	获取价格	DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5408/56-E3	VISHAY	获取价格	DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5408/58-E3	VISHAY	获取价格	DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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