5秒后页面跳转
1N5407-T/R PDF预览

1N5407-T/R

更新时间: 2024-02-16 00:42:08
品牌 Logo 应用领域
FRONTIER 二极管
页数 文件大小 规格书
2页 117K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,

1N5407-T/R 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:ActiveReach Compliance Code:not_compliant
HTS代码:8541.10.00.80风险等级:5.07
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e0最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:800 V
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5407-T/R 数据手册

 浏览型号1N5407-T/R的Datasheet PDF文件第2页 
Frontier Electronics Corp.  
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065  
TEL: (805) 522-9998 FAX: (805) 522-9989  
E-mail: frontiersales@frontierusa.com  
Web: http://www.frontierusa.com  
3A GENERAL PURPOSE PLASTIC RECTIFIER  
1N5400 THRU 1N5408  
FEATURES  
z LOW COST  
z UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOUND  
z DIFFUSED JUNCTION  
1.0(25.4)  
MIN  
z HIGH SURGE CURRENT CAPABILITY  
.052(1.3)  
.048(1.2)  
.375(9.5)  
.335(8.5)  
MECHANICAL DATA  
z CASE: TRANSFER MOLDED, DO201AD, DIMENSIONS  
IN INCHES AND (MILLIMETERS)  
.220(5.6)  
.197(5.0)  
z LEADS: SOLDERABLE PER MIL-STD-202, METHOD 208  
z POLARITY: CATHODE INDICATED BY COLOR BAND  
z WEIGHT: 1.2 GRAMS  
1.0(25.4)  
MIN  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED  
SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD. FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%  
RATINGS  
SYMBOL 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNITS  
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE  
MAXIMUM RMS VOLTAGE  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
MAXIMUM DC BLOCKING VOLTAGE  
100  
1000  
MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT  
IO  
3.0  
A
A
.375(9.5mm) LEAD LENGTH AT TA=55°C  
PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE HALF  
SINE-WAVE SUPERIMPOSED ON RATED LOAD  
TYPICAL JUNCTION CAPACITANCE (NOTE 1)  
IFSM  
CJ  
200  
30  
20  
PF  
TYPICAL THERMAL RESISTANCE (NOTE 2)  
STORAGE TEMPERATURE RANGE  
/W  
R
θja  
TSTG  
TOP  
-55 TO + 150  
-55 TO + 125  
OPERATING TEMPERATURE RANGE  
ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOTED)  
CHARACTERISTICS  
MAXIMUM FORWARD VOLTAGE AT IO DC  
MAXIMUM REVERSE CURRENT AT 25℃  
SYMBOL 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNITS  
VF  
IR  
1.2  
5
V
μA  
MAXIMUM REVERSE CURRENT AT100℃  
IR  
50  
μA  
NOTE: 1. MEASURED AT 1MHZ AND APPLIED REVERSE VOLTAGE OF 4.0 VOLTS  
2. BOTH LEADS ATTACHED TO HEAT SINK 63.5x63.5x1t(mm) COPPER PLATE AT LEAD LENGTH 5mm  
1N5400 THRU 1N5408  
Page: 1  

与1N5407-T/R相关器件

型号 品牌 获取价格 描述 数据表
1N5407-T3 WTE

获取价格

3.0A SILICON RECTIFIER
1N5407-T3-LF WTE

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, P
1N5407-TB WTE

获取价格

3.0A SILICON RECTIFIER
1N5407-TP MCC

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, P
1N5407TR CENTRAL

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
1N5407U23 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
1N5407U26 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
1N5407U27 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,
1N5408 WTE

获取价格

3.0A SILICON RECTIFIER
1N5408 SYNSEMI

获取价格

SILICON RECTIFIER DIODES