1N5402GP-T

更新时间： 2024-09-13 13:03:39

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	81K
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中文翻译

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数据手册

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1N5402GP-T 数据手册

M C C

1N5400

THRU

1N5408

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

Low Current Leakage

3 Amp Rectifier

50 - 1000 Volts

Metalurgically Bonded Construction

Low Forward Voltage

High Current Capability

Maximum Ratings

DO-201AD

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 30°C/W Junction To Lead

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

50V

100V

200V

400V

500V

600V

800V

1000V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

1N5400

1N5401

1N5402

1N5404

1N5405

1N5406

1N5407

1N5408

---

35V

70V

50V

100V

200V

400V

500V

600V

800V

1000V

Cathode

Mark

140V

280V

350V

420V

560V

700V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

3.0A

T_A= 105°C

Peak Forward Surge

Current

I_FSM

200A

8.3ms, half sine

DIMENSIONS

Maximum

INCHES

MIN

---

.048

1.000

MIN

---

1.20

25.40

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

I_R

1.0V

I_FM= 3.0A;

T_J= 25°C*

DIM

MAX

.370

.250

.052

---

MAX

9.50

6.40

1.30

---

NOTE

5.0mA

50mA

T_J= 25°C

T_J= 125°C

Typical Junction

Capacitance

C_J

40pF

Measured at

1.0MHz, V_R=4.0V

*Pulse test: Pulse width 300 msec, Duty cycle 2%

www.mccsemi.com

12 3

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