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1N483BUR

更新时间: 2024-09-15 03:54:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管开关
页数 文件大小 规格书
1页 80K
描述
SWITCHING DIODE

1N483BUR 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, GLASS PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.7
Is Samacsys:N其他特性:METALLURGICALLY BONDED
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:O-LELF-R2
JESD-609代码:e0最大非重复峰值正向电流:2 A
元件数量:1端子数量:2
最高工作温度:175 °C最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.5 W认证状态:Not Qualified
最大重复峰值反向电压:225 V子类别:Rectifier Diodes
表面贴装:YES端子面层:TIN LEAD
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N483BUR 数据手册

  
FEATURES  
1N483BUR  
SWITCHING DIODE  
METALLURGICALLY BONDED  
HERMETICALLY SEALED  
DOUBLE PLUG CONSTRUCTION  
ALSO AVAILABLE AS LL483B, CDLL483B  
1N483BUR  
MAXIMUM RATINGS AT 25 °C  
Operating Temperature:  
Storage Temperature:  
-65°C to +175°C  
-65°C to +175°C  
2A  
500mW  
3mW/°C  
200mA  
1.2mA/°C above TA= +25°C  
Surge Current, sine, 8.3mS:  
Total Power Dissipation, 25°C:  
Power Derating Factor, 25°C:  
Max. Operating Current, 25°C:  
Derating Factor:  
Max. Operating Current, 150°C:  
Derating Factor:  
D.C. Reverse Voltage (VRWM):  
50mA  
1.0mA/°C above TA= +150°C  
225V  
DESIGN DATA  
DC ELECTRICAL CHARACTERISTICS  
VF  
IR  
Case: Hermetically sealed glass package  
Lead Material: Copper clad steel  
Lead Finish: Tin/Lead  
Ambient  
(°C)  
Ambient  
(°C)  
IF  
mA  
Min  
V
Max  
V
Min  
µA  
Max  
µA  
V (dc)  
25  
100  
0.8  
1.0  
25  
25  
225  
250  
-
-
0.025  
100  
Marking: Blue body coat  
Polarity: Cathode end is banded.  
IRELAND - GORT ROAD, ENNIS, CO. CLARE  
PHONE:  
TOLL FREE:  
FAX:  
+353 65 6840044  
+186 62 702434  
+353 65 6822298  
WWW.MICROSEMI.COM  
U.S.A. DOMESTIC SALES CONTACT  
PHONE:  
(617) 926 0404  
1 800 666 2999  
TOLL FREE:  

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