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1N456ATR

更新时间： 2024-09-21 11:13:39
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
3页 128K
描述
高电导、低泄漏二极管

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中文翻译

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1N456ATR 数据手册

 浏览型号1N456ATR的Datasheet PDF文件第2页浏览型号1N456ATR的Datasheet PDF文件第3页 
DATA SHEET  
www.onsemi.com  
Small Signal Diode  
1N456A  
ABSOLUTE MAXIMUM RATINGS  
A
AXIAL LEAD  
(DO−35)  
(T = 25°C unless otherwise noted) (Notes 1, 2, 3)  
CASE 017AG  
Symbol  
Rating  
Value  
30  
Unit  
V
(Color Band Denotes Cathode)  
V
RRM  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
I
500  
mA  
A
F(AV)  
MARKING DIAGRAM  
I
Non−repetitive Peak Forward Surge  
Current  
FSM  
Pulse Width = 1.0 s  
Pulse Width = 1.0 ms  
1.0  
4.0  
T
Storage Temperature Range  
−65 to +200  
°C  
°C  
STG  
T
J
Operating Junction Temperature  
175  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. These ratings are limiting values above which the serviceability of the diode  
may be impaired.  
456A = Specific Device Code  
XY  
= Date Code  
Band Color: Black  
2. These ratings are based on a maximum junction temperature of 200°C.  
3. These are steady limits. The factory should be consulted on applications  
involving pulsed or low duty cycle operations.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
1N456A  
DO−35  
(Pb−Free)  
5,000 Units /  
Bulk  
Symbol  
Parameter  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
Max  
500  
300  
Unit  
mW  
1N456ATR  
DO−35  
(Pb−Free)  
10,000 Units /  
Tape & Reel  
P
D
R
°C/W  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
ELECTRICAL CHARACTERISTICS  
A
(T = 25°C unless otherwise noted)  
Symbol Parameter  
Conditions  
= 5 mA  
R
Min  
Max  
Unit  
V
R
Breakdown  
Voltage  
I
30  
−
V
V
F
Forward  
Voltage  
I = 100 mA  
F
−
1.0  
V
I
R
Reverse  
Leakage  
V
R
V
R
= 25 V  
−
−
25  
50  
nA  
mA  
= 25 V, T = 150°C  
A
Product parametric performance is indicated in the Electrical Characteristics for  
the listed test conditions, unless otherwise noted. Product performance may not  
be indicated by the Electrical Characteristics if operated under different  
conditions.  
© Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2023 − Rev. 2  
1N456A/D  
 
123

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1N456ATR 替代型号

型号 品牌 替代类型 描述 数据表
1N456A ONSEMI

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 高电导、低泄漏二极管

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