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1N457 PDF预览

1N457

更新时间: 2024-11-11 11:12:15
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
3页 129K
描述
高电导、低泄漏二极管

1N457 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:DO-35, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.84
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-35
JESD-30 代码:O-XALF-W2JESD-609代码:e3
最大非重复峰值正向电流:0.6 A元件数量:1
端子数量:2最高工作温度:175 °C
最大输出电流:0.2 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:70 V
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N457 数据手册

 浏览型号1N457的Datasheet PDF文件第2页浏览型号1N457的Datasheet PDF文件第3页 
DATA SHEET  
www.onsemi.com  
Small Signal Diode  
1N457, 1N457A  
ABSOLUTE MAXIMUM RATINGS  
A
AXIAL LEAD  
(DO35)  
(T = 25°C unless otherwise noted) (Notes 1, 2, 3)  
CASE 017AG  
Symbol  
Rating  
Value  
70  
Unit  
V
(Color Band Denotes Cathode)  
V
RRM  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
I
200  
mA  
A
F(AV)  
MARKING DIAGRAM  
I
Nonrepetitive Peak Forward Surge  
Current  
FSM  
Pulse Width = 1.0 s  
Pulse Width = 1.0 ms  
1.0  
4.0  
T
Storage Temperature Range  
65 to +200  
°C  
°C  
STG  
T
J
Operating Junction Temperature  
175  
457 / 457A = Specific Device Code  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
XY  
= Date Code  
Band Color: Black  
1. These ratings are limiting values above which the serviceability of any  
semiconductor device may be impaired.  
2. These ratings are based on a maximum junction temperature of 200°C.  
3. These are steady limits. The factory should be consulted on applications  
involving pulsed or low duty cycle operations.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
1N457  
DO35  
(PbFree)  
5,000 Units /  
Bulk  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
Max  
500  
300  
Unit  
mW  
1N457A  
1N457TR  
DO35  
(PbFree)  
5,000 Units /  
Bulk  
P
D
R
°C/W  
q
JA  
DO35  
(PbFree)  
10,000 Units /  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
ELECTRICAL CHARACTERISTICS  
(T = 25°C unless otherwise noted)  
A
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Unit  
V
Breakdown Voltage  
Forward Voltage  
I
= 100 mA  
70  
V
R
R
V
1N457  
1N457A  
I = 20 mA  
1.0  
1.0  
V
V
F
F
I = 100 mA  
F
I
Reverse Leakage  
Total Capacitance  
V
V
= 60 V  
25  
5
nA  
R
R
R
= 60 V, T = 150°C  
mA  
A
C
1N457  
V
R
= 0, f = 1.0 MHz  
8.0  
pF  
T
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
© Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
June, 2023 Rev. 2  
1N457A/D  
 

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