Datasheet > 1N456T26R

1N456T26R

更新时间： 2024-11-10 20:00:39

品牌	Logo	应用领域
德州仪器 - TI		二极管
页数	文件大小	规格书
2页	36K
描述
0.2A, SILICON, SIGNAL DIODE, DO-35

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技术参数
数据手册

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1N456T26R 技术参数

生命周期：	Transferred	包装说明：	O-PALF-W2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.64
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JEDEC-95代码：	DO-35
JESD-30 代码：	O-PALF-W2	元件数量：	1
端子数量：	2	最大输出电流：	0.2 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	最大功率耗散：	0.5 W
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	WIRE	端子位置：	AXIAL
Base Number Matches：	1

1N456T26R 数据手册

Discr ete P OWER & Sign a l

Tech n ologies

1N/FDLL 456/A - 1N/FDLL 459/A

COLOR BAND MARKING

DEVICE 1ST BAND 2ND BAND

FDLL456

FDLL456A BROWN

BROWN

WHITE

BLACK

BROWN

RED

FDLL457 RED

FDLL457A RED

FDLL458 RED

FDLL458A RED

RED

FDLL459A RED

LL-34

FDLL459

THE PLACEMENT OF THE EXPANSION GAP

HAS NO RELATIONSHIP TO THE LOCATION

OF THE CATHODE TERMINAL

DO-35

RED

High Conductance Low Leakage Diode

Sourced from Process 1M.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

W_IV

Working Inverse Voltage

456/A

457/A

458/A

459/A

125

175

200

I_O

Average Rectified Current

DC Forward Current

I_F

500

600

Recurrent Peak Forward Current

i_f

Peak Forward Surge Current

Pulse width = 1.0 second

Pulse width = 1.0 microsecond

Storage Temperature Range

i_f(surge)

1.0

4.0

-65 to +200

°C

T_stg

T_J

Operating Junction Temperature

175

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

1N / FDLL 456/A - 459/A

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

500

3.33

300

mW/°C

°C/W

R_θ

中文翻译

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与1N456T26R相关器件

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1N456T50R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35
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1N457	ONSEMI	获取价格	高电导、低泄漏二极管
1N457	MICROSEMI	获取价格	SWITCHING DIODE
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1N457.T26A	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 70V V(RRM), Silicon, DO-35
1N457.T26R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 70V V(RRM), Silicon, DO-35