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1N4454_15 PDF预览

1N4454_15

更新时间: 2024-09-17 01:25:19
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描述
Small-Signal Diode Fast Switching Diode

1N4454_15 数据手册

 浏览型号1N4454_15的Datasheet PDF文件第2页 
1N4454  
Small-Signal Diode  
Fast Switching Diode  
Features  
Silicon Epitaxial Planar Diode  
Fast switching diode  
Mechanical Data  
Case: DO-34, DO-35 Glass Case  
Weight: approx. 0.13g  
Maximum Ratings and Thermal Characteristics  
(TA=25oC unless otherwise noted.)  
Parameter  
Symbol  
Limit  
Unit  
Reverse voltage  
VR  
75  
Volts  
Volts  
Peak reverse voltage  
VRM  
100  
Maximum average rectified current half wave rectification  
with resistive load at Tamb=25oC and f>50Hz (1)  
IF(AV)  
150  
mA  
Surge forward current at t<1s and T=25oC  
IFSM  
Ptot  
500  
500  
mA  
mW  
oC  
j
Maximum power dissipation at Tamb=25oC  
(1)  
Maximum junction temperature  
Storage temperature range  
T
175  
j
TS  
-65 to +175  
oC  
Electrical Characteristics  
(TA=25oC unless otherwise noted.)  
Parameter  
Symbol  
Min.  
Max.  
Unit  
Maximum forward voltage drop at IF=10mA  
VF  
IR  
-
-
1.0  
Volt  
nA  
uA  
Leakage current  
at VR=50V  
at VR=75V  
100  
5
Reverse breakdown voltage tested with 100uA pulses  
V(BR)R  
Ctot  
100  
-
-
Volts  
pF  
Capacitance at VF=VR=0V  
2.0  
Reverse recovery time  
from IF=10mA to IR=1mA, VR=6V, RL=100  
ns  
trr  
-
4.0  
Thermal resistance junction to ambient air (1)  
RθJA  
-
350  
-
OC/W  
-
Rectification efficiency at f=100MHz, VRF=2V  
ην  
0.45  
Notes:  
1. Valid provided that leads at a distance of 8mm from case are kept at ambient temperature  
622  

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