Datasheet > 1N4454F3/50K

1N4454F3/50K

更新时间： 2024-11-09 14:46:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
2页	57K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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1N4454F3/50K 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Is Samacsys：	N	Base Number Matches：	1

1N4454F3/50K 数据手册

1N4454

Small-Signal Diode

Reverse Voltage 100V

Forward Current 150mA

DO-204AH (DO-35 Glass)

Features

• Silicon Epitaxial Planar Diode

• Fast switching diode

Mechanical Data

Case: DO-35 Glass Case

Weight: approx. 0.13g

Packaging Codes/Options:

Dimensions in inches

and (millimeters)

F2/10K per Ammo tape (52mm), 50K/box

F3/10K per 13” reel (52mm tape), 50K/box

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbol

Limit

Unit

Reverse voltage

Peak reverse voltage

V_R

V_RM

100

Maximum average rectified current half wave rectification

I_F(AV)

150

with resistive load at T_amb= 25°C and f ≥ 50Hz⁽¹⁾

Surge forward current at t < 1s and T_j= 25°C

Maximum power dissipation at T_amb= 25°C⁽¹⁾

Thermal resistance junction to ambient air⁽¹⁾

Maximum junction temperature

I_FSM

P_tot

R_θJA

T_J

500

°C/W

°C

350

175

Storage temperature range

T_S

–65 to +175

°C

Electrical Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbol

Min.

Max.

Unit

Maximum forward voltage drop at I_F= 10mA

V_F

–

1.0

Leakage current

at V_R= 50V

at V_R= 75V

100

µA

I_R

–

Reverse breakdown voltage tested with 100µA pulses

V_(BR)R

C_tot

100

–

Capacitance at V_F= V_R= 0V

Reverse recovery time

from I_F= 10mA to I_R= 1mA, V_R= 6V, R_L= 100Ω

t_rr

–

Rectification efficiency at f = 100MHz, V_RF= 2V

η_v

0.45

Note:

(1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature

7/2/01

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