Datasheet > 1N4006G(LS)

1N4006G(LS)

更新时间： 2024-12-02 14:52:27

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
4页	404K
描述
1.0A GLASS PASSIVATED RECTIFIERS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N4006G(LS) 数据手册

Green

1N4006G-1N4007G(LS)

REVERSE VOLTAGE – 800 to 1000 Volts

FORWARD CURRENT – 1.0 Amperes

GLASS PASSIVATED RECTIFIER

FEATURES

 Glass passivated chip

DO-41

 Low reverse leakage current

 Low forward voltage drop

 High current capability

 Plastic material has UL flammability classification 94V-0

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

MECHANICAL DATA

DO-41

 Package : JEDEC DO-41 molded plastic

 Polarity : Color band denotes cathode

 Weight : 0.012 ounces, 0.34 grams

 Mounting position : Any

Dim

Min.

25.4

Max.

4.10

5.20

0.86 ø

2.70 ø

0.71 ø

2.00 ø

All Dimensions in millimeter

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

PARAMETER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

SYMBOL

V_RRM

1N4006G

1N4007G

1000

UNIT

800

560

800

V_RMS

700

Maximum DC Blocking Voltage

VDC

1000

Maximum Average Forward

Rectified Current

@T_A=75°C

I_(AV)

1.0

Peak Forward Surge Current 8.3ms single half sine-wave

super imposed on rated load (JEDEC METHOD)

I_FSM

I_R

Maximum forward Voltage at 1.0A DC

1.1

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@T_J=25°C

@T_J=125°C

Typical Junction Capacitance (Note 4)

Typical Thermal Resistance (Note 5)

Operating Temperature Range

Storage Temperature Range

C_T

R_thJA

T_J

°C/W

°C

-55 to +150

T_STG

°C

Note :

REV.7, Oct-2021, KDDC01

1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony

compounds.

4. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

5. Thermal Resistance Junction to Ambient.

12 3 4

中文翻译

下载PDF

与1N4006G(LS)相关器件

型号	品牌	获取价格	描述	数据表
1N4006G-A	GOOD-ARK	获取价格	1.0A GLASS PASSIVATED RECTIFIER
1N4006G-B	GOOD-ARK	获取价格	1.0A GLASS PASSIVATED RECTIFIER
1N4006GH01	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GH02-2	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GH02-3	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GH02-5	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GH03-1	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GH03-2	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GH03-4	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GH04	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,

与1N4006G(LS)相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

1N4006G(LS)

1N4006G(LS) 数据手册

与1N4006G(LS)相关器件

与1N4006G(LS)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N4006G(LS)

1N4006G(LS) 数据手册

与1N4006G(LS)相关器件

与1N4006G(LS)相关文章

您还可以找

您在本页遇到什么问题？