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1N4006GP PDF预览

1N4006GP

更新时间： 2024-11-30 04:45:47
品牌 Logo 应用领域
DAESAN 二极管
页数 文件大小 规格书
2页 316K
描述
CURRENT 1.0 Ampere VOLTAGE 50 to 1300 Volts

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中文翻译

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1N4006GP 数据手册

 浏览型号1N4006GP的Datasheet PDF文件第2页 
CURRENT 1.0 Ampere  
VOLTAGE 50 to 1300 Volts  
1N4001GP THRU 1N4007GP  
Features  
· The plastic package carries Underwrites Laboratory  
Flammability Classification 94V-0  
· High current capability  
DO-41  
· Low reverse leakage  
· Glass passivated junction  
· Low forward voltage drop  
· High temperature soldering guaranteed : 350℃/10 seconds,  
0.375"(9.5mm) lead length, 5 lbs, (2.3kg) tension  
0.107(2.7)  
0.080(2.0)  
1.0(25.4)  
DIA.  
MIN.  
0.205(5.2)  
0.166(4.2)  
Mechanical Data  
· Case : JEDEC DO-41 molded plastic body  
· Terminals : Lead solderable per MIL-STD-750,  
method 2026  
· Polarity : Color band denotes cathode end  
· Mounting Position : Any  
1.0(25.4)  
MIN.  
0.034(0.9)  
0.028(0.7)  
DIA.  
· Weight : 0.012 ounce, 0.33 gram  
Dimensions in inches and (millimeters)  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
Symbols  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
Units  
4001GP 4002GP 4003GP 4004GP 4005GP 4006GP 4007GP  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
V
RRM  
RMS  
Volts  
Volts  
Volts  
V
100  
1000  
Maximum DC blocking voltage  
VDC  
Maximum average forward rectified current  
0.375"(9.5mm) lead length TA=75℃  
I
(AV)  
1.0  
30.0  
1.1  
Amp  
Peak forward surge current 8.3ms half sine  
wave superimposed on rated load  
(JEDEC method)  
IFSM  
Amps  
Maximum instantaneous forward voltage  
at 1.0A  
V
F
Volts  
Maximum reverse current  
at rated DC blocking voltage  
T
T
A
=25℃  
5.0  
IR  
μA  
50.0  
A=100℃  
RθJA  
RθJL  
50.0  
25.0  
15.0  
Typical thermal resistance (Note 1)  
℃/W  
Typical junction capacitance (Note 2)  
pF  
CJ  
T
J
℃
Operating and storage temperature range  
-65 to +175  
TSTG  
Notes:  
(1) Measured at 1MHz and applied reverse voltage of 4.0V DC.  
(2) Thermal resistance from junction to ambient and from junction to lead at 0.375"(9.5mm) lead length, P.C.B. mounted  
12

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006GP/62 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006GP/71 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006GP/72 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006GP/90 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006GP/91 VISHAY

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006GP-AP-HF MCC

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 		Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,

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