Datasheet > 1N4006GP/4F

1N4006GP/4F

更新时间： 2024-12-02 06:47:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	329K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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1N4006GP/4F 数据手册

1N4001GP thru 1N4007GP

Vishay General Semiconductor

Glass Passivated Junction Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

I_R

1.0 A

50 V to 1000 V

30 A

5.0 µA

V_F

1.1 V

T_jmax.

175 °C

* Glass-plastic encapsulation

technique is covered by

Patent No. 3,996,602,

DO-204AL (DO-41)

brazed-lead assembly

by Patent No. 3,930,306

Features

Mechanical Data

• Superectifier structure for High Reliability

application

Case: DO-204AL, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Cavity-free glass-passivated junction

• Low forward voltage drop

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: Color band denotes cathode end

• Low leakage current, typical I less than 0.1 µA

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Typical Applications

For use in general purpose rectification of power sup-

plies, inverters, converters and freewheeling diodes

for both consumer and automotive applications

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP Unit

Maximum repetitive peak

reverse voltage

V_RRM

100

200

400

600

800

1000

* Maximum RMS voltage

V_RMS

V_DC

140

200

280

400

420

600

560

800

700

* Maximum DC blocking

voltage

100

1000

* Maximum average forward

rectified current 0.375"

(9.5 mm) lead length

at T_A= 75 °C

I_F(AV)

1.0

* Peak forward surge current

8.3 ms single half sine-wave

superimposed on rated load

I_FSM

* Maximum full load reverse

current, full cycle average

0.375" (9.5 mm) lead length

T_A= 75 °C

I_R(AV)

µA

* Operating junction and

T_J, T_STG

- 65 to + 175

°C

storage temperature range

Document Number 88504

14-Sep-05

www.vishay.com

12 3 4

中文翻译

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与1N4006GP/4F相关器件

型号	品牌	获取价格	描述	数据表
1N4006GP/54	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006GP/60	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006GP/62	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006GP/71	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006GP/72	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006GP/90	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006GP/91	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
1N4006GP-AP-HF	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GP-BP	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKA
1N4006GP-BP-HF	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,

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