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1N4006GP-BP PDF预览

1N4006GP-BP

更新时间: 2024-02-23 19:39:34
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
4页 512K
描述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

1N4006GP-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-41
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.08
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:800 V
最大反向恢复时间:2 µs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N4006GP-BP 数据手册

 浏览型号1N4006GP-BP的Datasheet PDF文件第2页浏览型号1N4006GP-BP的Datasheet PDF文件第3页浏览型号1N4006GP-BP的Datasheet PDF文件第4页 
M C C  
1N4001GP  
THRU  
1N4007GP  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Halogen free available upon request by adding suffix "-HF"  
·
·
Glass Passivated Junction  
Low Current Leakage and Low Cost  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
1 Amp Glass  
PassivatedRectifier  
50 - 1000 Volts  
·
·
Maximum Ratings  
DO-41  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 20°C/W Junction To Lead  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
1N4001GP  
1N4002GP  
1N4001GP  
1N4002GP  
1N4003GP  
1N4004GP  
1N4005GP  
1N4006GP  
1N4007GP  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
A
1N4003GP  
1N4004GP  
1N4005GP  
1N4006GP  
1N4007GP  
Cathode  
Mark  
140V  
280V  
420V  
560V  
700V  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.0A  
TA = 75°C  
C
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
IFM = 1.0A;  
TJ = 25°C*  
DIMENSIONS  
INCHES  
MIN  
.166  
.080  
.028  
MM  
MIN  
DIM  
A
B
C
D
MAX  
.205  
.107  
.034  
---  
MAX  
5.20  
2.70  
.90  
NOTE  
5.0mA  
50mA  
TJ = 25°C  
TJ = 125°C  
4.10  
2.00  
.70  
1.000  
25.40  
---  
Typical Junction  
Capacitance  
Maximum Reverse  
CJ  
15pF  
Measured at  
1.0MHz, VR=4.0V  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
2.0us  
Trr  
Recovery Time  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
Note: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
Revision: B  
2013/01/01  
1 of 4  

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