1N4001G-K – 1N4007G-K
Taiwan Semiconductor
1A, 50V - 1000V Standard Rectifier
FEATURES
KEY PARAMETERS
● Glass passivated chip junction
● High current capability, Low VF
● High reliability
● High surge current capability
● Low power loss, high efficiency
● RoHS Compliant
PARAMETER
IF
VRRM
VALUE
UNIT
1
50 - 1000
30
A
V
IFSM
A
TJ MAX
150
°C
● Halogen-free according to IEC 61249-2-21
Package
Configuration
DO-204AL (DO-41)
Single die
APPLICATIONS
● DC to DC converter
● Switching mode converters and inverters
● General purpose
MECHANICAL DATA
● Case: DO-204AL (DO-41)
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Pure tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
● Weight: 0.330g (approximately)
DO-204AL (DO-41)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
1N
1N
1N
1N
1N
1N
1N
4001G 4002G 4003G 4004G 4005G 4006G 4007G
PARAMETER
SYMBOL
UNIT
-K
1N
-K
1N
-K
1N
-K
1N
-K
1N
-K
1N
-K
1N
Marking code on the device
4001G 4002G 4003G 4004G 4005G 4006G 4007G
Repetitive peak reverse voltage
Reverse voltage, total rms value
Forward current
VRRM
VR(RMS)
IF
50
35
100
70
200
140
400
280
1
600
420
800
560
1000
700
V
V
A
Surge peak forward current,
8.3ms single half sine wave
superimposed on rated load
IFSM
30
A
Junction temperature
Storage temperature
TJ
-55 to +150
-55 to +150
°C
°C
TSTG
1
Version: B2104