Datasheet > 1N3595

1N3595

更新时间： 2023-12-06 20:11:22

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	225K
描述
150mA,150V Through-Hole Diode-Switching Single

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1N3595 数据手册

1N3595

SILICON LOW LEAKAGE DIODE

JEDEC DO-35 CASE

DESCRIPTION

The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high

conductance applications. Higher breakdown voltage devices are available on special order.

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

Peak Working Reverse Voltage

Average Forward Current

Forward Steady-State Current

Recurrent Peak Forward Current

Peak Forward Surge Current (1.0s pulse)

Peak Forward Surge Current (1.0µs pulse)

Power Dissipation

150

125

150

225

600

500

4.0

RRM

RWM

FSM

500

Operating and Storage

Junction Temperature

T ,T

J stg

-65 to +200

°C

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =125V

MIN

MAX

UNITS

1.0

500

3.0

µA

V =125V, T =125°C

V =125V, T =150°C

V =30V, T =125°C

300

I =100µA

150

I =1.0mA

0.54

0.62

0.65

0.75

0.79

0.83

0.69

0.77

0.80

0.88

0.92

1.0

I =5.0mA

I =10mA

I =50mA

I =100mA

I =200mA

V =0, f=1.0MHz

8.0

3.0

µs

V =3.5V, I =10mA, R =1.0kΩ

(SEE REVERSE SIDE)

12 3 4

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与1N3595相关器件

型号	品牌	获取价格	描述	数据表
1N3595.TR	TI	获取价格	RECTIFIER DIODE,150V V(RRM),DO-35
1N3595-1	MICROSEMI	获取价格	GENERAL PURPOSE DIODES
1N3595-1	SENSITRON	获取价格	SWITCHING DIODE
1N3595-1_1	MICROSEMI	获取价格	SWITCHING DIODE
1N3595-1E3	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, 125V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACK
1N3595-1HARDGLASS	MICROSEMI	获取价格	Standard Rectifier (trr more than 500ns)
1N3595A-1	MICROSEMI	获取价格	SWITCHING DIODE
1N3595AUR-1	MICROSEMI	获取价格	SWITCHING DIODE
1N3595DHD	STMICROELECTRONICS	获取价格	0.15A, SILICON, SIGNAL DIODE, DO-35, GLASS, CB-102, 2 PIN
1N3595E3	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2