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1A212 PDF预览

1A212

更新时间: 2024-09-12 22:09:23
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10页 197K
描述
High-Performance DUPLEX(Half-Duplex Communication)

1A212 数据手册

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PRODUCT INFORMATION  
1A212  
Half-Duplex Communication  
880nm  
High-Performance DUPLEX  
This single-chip device operates as  
both an Emitter and Detector, and  
transmits data over a single fiber in  
half-duplex mode — thus reducing  
both fiber and component costs when  
compared with traditional approaches.  
Optical and Electrical Characteristics (25° C Case Temperature)  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT  
TEST CONDITION  
Fiber-Coupled Power  
P
25  
55  
7
W  
IF=60 mA  
Fiber:  
50/125m  
Graded  
fiber  
(Fig.1,2,&3) (Table1)  
(Note 1)  
Rise and Fall Time  
t ,t  
10  
ns  
IF=60 mA  
r f  
(10-90%)  
(no bias)  
Index  
Bandwidth  
f
50  
MHz IF=60 mA  
c
NA=0.20  
(3dB  
)
el  
Peak Wavelength  
870 880 890 nm  
IF=60 mA  
IF=60 mA  
IF=60 mA  
p
Spectral Width (FWHM)  
Forward Voltage (Fig.5)  
50  
nm  
V
VF  
R
1.7 1.9  
Responsivity  
(Fig. 6,7,&8) (Table2)  
0.10 0.15  
A/W VR=1V  
Fiber:  
50/125m  
Graded  
=880 nm  
Rise and Fall Time  
t ,t  
7
10  
ns  
VR=1V  
RL=50  
(no bias)  
r f  
(10-90%)  
Index  
Bandwidth  
f
50  
MHz VR=1V  
RL=50  
c
NA=0.20  
Capacitance  
Dark Current  
C
Id  
30  
5
pF  
VR= 1V, f=1 MHz  
VR=1V  
10  
nA  
Note 1: Measured at the exit of 100 meters of fiber.  
Ø4.7  
Ø1.5  
0.6  
Absolute Maximum Ratings  
PARAMETER  
3.7  
SYMBOL  
LIMIT  
Storage Temperature  
T
-55 to +125ЊC  
stg  
Operating Temperature (derating: Fig.4)  
Electrical Power Dissipation (derating: Fig.4)  
Continuous Forward Current (fр10 kHz)  
Peak Forward Current (duty cycleр50%, fу1 MHz)  
Reverse Voltage  
T
-55 to +125ЊC  
160 mW  
80 mA  
op  
14  
P
tot  
0.4  
IF  
IFRM  
VR  
CASE  
130 mA  
2.0 V  
ANODE  
CATHODE  
Soldering Temperature (2mm from the case for 10 sec)  
T
260ЊC  
sld  
2.5  
5.4  
BOTTOM VIEW  
Thermal Characteristics  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT  
The diode chip is isolated from the case.  
Thermal Resistance -Infinite Heat Sink  
R
200  
ЊC/W  
thjc  
TO-46 Package With Lens  
Thermal Resistance -No Heat Sink  
R
500  
ЊC/W  
%/ЊC  
thja  
Temperature Coefficient -Optical Power dP/dT  
-0.4  
0.3  
j
Temperature Coefficient -Wavelength  
Temperature Coefficient -Responsivity  
Temperature Coefficient -Dark Current  
d/dT  
nm/ЊC  
j
j
dR/dT  
%/ЊC  
%/ЊC  
0.2  
2.5  
dI /dT  
d
j
11841.12 1994-09-20  
America: Tel 1-800-96MITEL Fax (613) 592-6909  
Asia: Tel (65) 293 5312 Fax (65) 293 8527  
Europe: Tel (46) 8 58 02 45 00 Fax (46) 8 58 02 01 10  
Tel (44) 1291 436180 Fax (44) 1291 436771  

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Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, MINIATURE, PLASTIC,