PRODUCT INFORMATION
1A212
Half-Duplex Communication
880nm
High-Performance DUPLEX
This single-chip device operates as
both an Emitter and Detector, and
transmits data over a single fiber in
half-duplex mode — thus reducing
both fiber and component costs when
compared with traditional approaches.
Optical and Electrical Characteristics (25° C Case Temperature)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
Fiber-Coupled Power
P
25
55
7
W
IF=60 mA
Fiber:
50/125m
Graded
fiber
(Fig.1,2,&3) (Table1)
(Note 1)
Rise and Fall Time
t ,t
10
ns
IF=60 mA
r f
(10-90%)
(no bias)
Index
Bandwidth
f
50
MHz IF=60 mA
c
NA=0.20
(3dB
)
el
Peak Wavelength
870 880 890 nm
IF=60 mA
IF=60 mA
IF=60 mA
p
Spectral Width (FWHM)
Forward Voltage (Fig.5)
⌬
50
nm
V
VF
R
1.7 1.9
Responsivity
(Fig. 6,7,&8) (Table2)
0.10 0.15
A/W VR=1V
Fiber:
50/125m
Graded
=880 nm
Rise and Fall Time
t ,t
7
10
ns
VR=1V
RL=50
(no bias)
r f
(10-90%)
⍀
Index
Bandwidth
f
50
MHz VR=1V
RL=50
c
NA=0.20
⍀
Capacitance
Dark Current
C
Id
30
5
pF
VR= 1V, f=1 MHz
VR=1V
10
nA
Note 1: Measured at the exit of 100 meters of fiber.
Ø4.7
Ø1.5
0.6
Absolute Maximum Ratings
PARAMETER
3.7
SYMBOL
LIMIT
Storage Temperature
T
-55 to +125ЊC
stg
Operating Temperature (derating: Fig.4)
Electrical Power Dissipation (derating: Fig.4)
Continuous Forward Current (fр10 kHz)
Peak Forward Current (duty cycleр50%, fу1 MHz)
Reverse Voltage
T
-55 to +125ЊC
160 mW
80 mA
op
14
P
tot
0.4
IF
IFRM
VR
CASE
130 mA
2.0 V
ANODE
CATHODE
Soldering Temperature (2mm from the case for 10 sec)
T
260ЊC
sld
2.5
5.4
BOTTOM VIEW
Thermal Characteristics
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
The diode chip is isolated from the case.
Thermal Resistance -Infinite Heat Sink
R
200
ЊC/W
thjc
TO-46 Package With Lens
Thermal Resistance -No Heat Sink
R
500
ЊC/W
%/ЊC
thja
Temperature Coefficient -Optical Power dP/dT
-0.4
0.3
j
Temperature Coefficient -Wavelength
Temperature Coefficient -Responsivity
Temperature Coefficient -Dark Current
d/dT
nm/ЊC
j
j
dR/dT
%/ЊC
%/ЊC
0.2
2.5
dI /dT
d
j
11841.12 1994-09-20
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