Datasheet > 1A1

1A1

更新时间： 2024-09-18 07:20:11

品牌	Logo	应用领域
EIC		整流二极管
页数	文件大小	规格书
2页	40K
描述
SILICON RECTIFIER DIODES

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中文翻译

获取价格

数据手册

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1A1 数据手册

SILICON RECTIFIER DIODES

R-1

1A1 ~ 1A7

PRV : 50 - 1000 Volts

Io : 1.0 Ampere

1.00 (25.4)

MIN.

FEATURES :

* High current capability

0.099 (2.51)

0.095 (2.42)

* High reliability

0.138 (3.5)

0.114 (2.9)

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

1.00 (25.4)

MIN.

0.024 (0.6)

MECHANICAL DATA :

0.020 (0.5)

* Case : Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

Dimensions in inches and ( millimeters )

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.20 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specifie.

Single phase, half wave, 60 Hz, resistive or inductive load

For capacitive load, derate current by 20%

RATING

SYMBOL

UNIT

1A1

1A2

1A3

1A4

1A5

1A6

1A7

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

VRRM

V^RMS

V^DC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Current

0.375"(9.5mm) Lead Length Ta = 50 °C

Peak Forward Surge Current

I^F(AV)

1.0

I^FSM

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Forward Voltage at I^F= 1.0 A.

I^R

1.1

μA

5.0

Maximum DC Reverse Current Ta = 25 °C

I^R(H)

C^J

at rated DC Blocking Voltage

Typical Junction Capacitance (1)

Typical Thermal Resistance (2)

Junction Temperature Range

Storage Temperature Range

Ta = 100 °C

μA

°C/W

°C

RθJA

T^J

- 65 to + 125

- 65 to + 150

T^STG

°C

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC

(2) Thermal Resistance from Junction to Ambient 0.375" (9.5mm) Lead Length

Page 1 of 2

Rev. 03 : March 25, 2005

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