Datasheet > 1A1_V01

1A1_V01

更新时间： 2022-12-29 20:29:57

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
2页	648K
描述
GENERAL PURPOSE SILICON RECTIFIER

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数据手册

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1A1_V01 数据手册

1A1 THRU 1A7

Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere

GENERAL PURPOSE SILICON RECTIFIER

R-1

Features

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0



1.0 (25.4)

MIN.

Construction utilizes void-free molded plastic technique

Low reverse leakage



0.102 (2.6)

0.091 (2.3)

DIA.



High forward surge current capability

High temperature soldering guaranteed:

250°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension

0.140(3.50)

0.114(2.90)

Mechanical Data

1.0 (25.4)

MIN.

Case : JEDEC R-1 Molded plastic body

0.025 (0.65)

0.021 (0.55)

DIA.

Terminals : Solder plated, solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight

: 0.0023 ounce, 0.07 grams

Maximum Ratings And Electrical Characteristics

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter

1A1 1A2 1A3 1A4 1A5 1A6 1A7

MDD MDD MDD MDD MDD MDD MDD

1A1 1A2 1A3 1A4 1A5 1A6 1A7

UNITS

SYMBOLS

Marking Code

100

200

140

200

400

280

400

600

420

600

800 1000

560 700

800 1000

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V^RRM

V^RMS

V^DC

100

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TA=25°C

Peak forward surge current

I^(AV)

1.0

I^FSM

25.0

1.1

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

V^F

I^R

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25°C

5.0

50.0

TA=100°C

°C/W

°C

Typical junction capacitance (NOTE 1)

C^J

15.0

50.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

R^θ^JA

-50 to +150

T^J,T^STG

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

DN:T19815A0

https://www.microdiode.com

Rev:2019A0

Page :1

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