1N3595

更新时间： 2024-11-13 22:34:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		信号二极管
页数	文件大小	规格书
2页	36K
描述
Small Signal Diode Absolute Maximum Ratings

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1N3595 数据手册

1N3595

DO-35

Color Band Denotes Cathode

Small Signal Diode

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_RRM

I_F(AV)

I_FSM

Maximum Repetitive Reverse Voltage

150

200

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

1.0

4.0

Pulse Width = 1.0 microsecond

Storage Temperature Range

-65 to +200

°C

T_stg

T_J

Operating Junction Temperature

175

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

Thermal Resistance, Junction to Ambient

500

300

R_θJA

C/W

Electrical Characteristics T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Max Units

V_R

V_F

Breakdown Voltage

150

I = 100

Forward Voltage

I_F= 1.0 mA

I_F= 5.0 mA

I_F= 10 mA

I_F= 50 mA

I_F= 100 mA

I_F= 200 mA

V_R= 125 V

V_R= 30 V, T_A= 125°C

V_R= 125 V, T_A= 125°C

V_R= 125 V, T_A= 150°C

V_R= 0, f = 1.0 MHz

0.52

0.60

0.65

0.75

0.79

0.83

0.68

0.75

0.80

0.88

0.92

1.00

0.3

0.5

I_R

Reverse Current

µA

C_T

t_rr

Total Capacitance

Reverse Recovery Time

I_F= 10 mA, V_R= 3.5 V,

µs

R_L= 1.0 kΩ

2002 Fairchild Semiconductor Corporation

1N3595, Rev. A

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1N3595 替代型号

型号	品牌	替代类型	描述	数据表
1N3595-1	MICROSEMI	功能相似	GENERAL PURPOSE DIODES

与1N3595相关器件

型号	品牌	获取价格	描述	数据表
1N3595.TR	TI	获取价格	RECTIFIER DIODE,150V V(RRM),DO-35
1N3595-1	MICROSEMI	获取价格	GENERAL PURPOSE DIODES
1N3595-1	SENSITRON	获取价格	SWITCHING DIODE
1N3595-1_1	MICROSEMI	获取价格	SWITCHING DIODE
1N3595-1E3	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, 125V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACK
1N3595-1HARDGLASS	MICROSEMI	获取价格	Standard Rectifier (trr more than 500ns)
1N3595A-1	MICROSEMI	获取价格	SWITCHING DIODE
1N3595AUR-1	MICROSEMI	获取价格	SWITCHING DIODE
1N3595DHD	STMICROELECTRONICS	获取价格	0.15A, SILICON, SIGNAL DIODE, DO-35, GLASS, CB-102, 2 PIN
1N3595E3	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2