Datasheet > 150GAL12DN2

150GAL12DN2

更新时间： 2024-02-17 23:39:30

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
5页	80K
描述
IGBT Module

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150GAL12DN2 数据手册

BSM 150 GAL 120 DN2

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

typ.

Unit

min.

max.

Static Characteristics

Gate threshold voltage

GE(th)

= V

I = 6 mA

4.5

5.5

6.5

CE, C

Collector-emitter saturation voltage

CE(sat)

= 15 V, I = 150 A, T = 25 °C

2.5

3.1

= 15 V, I = 150 A, T = 125 °C

3.7

Zero gate voltage collector current

CES

= 1200 V, V = 0 V, T = 25 °C

2.8

= 1200 V, V = 0 V, T = 125 °C

Gate-emitter leakage current

= 20 V, V = 0 V

GES

400

AC Characteristics

Transconductance

= 20 V, I = 150 A

Input capacitance

= 25 V, V = 0 V, f = 1 MHz

iss

1.6

0.6

Output capacitance

= 25 V, V = 0 V, f = 1 MHz

oss

rss

Reverse transfer capacitance

= 25 V, V = 0 V, f = 1 MHz

Nov-24-1997

123 4 5

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