Datasheet > 150GAL12DN2

150GAL12DN2

更新时间： 2024-02-23 05:12:18

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其他 - ETC		双极性晶体管
页数	文件大小	规格书
5页	80K
描述
IGBT Module

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150GAL12DN2 数据手册

BSM 150 GAL 120 DN2

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

typ.

Unit

min.

max.

Switching Characteristics, Inductive Load at T = 125 °C

Turn-on delay time

= 600 V, V = 15 V, I = 150 A

d(on)

Ω

= 5.6

200

100

600

400

200

800

100

Gon

Rise time

= 600 V, V = 15 V, I = 150 A

Ω

= 5.6

Gon

Turn-off delay time

= 600 V, V = -15 V, I = 150 A

d(off)

Ω

= 5.6

Goff

Fall time

= 600 V, V = -15 V, I = 150 A

= 5.6 Ω

Goff

Free-Wheel Diode

Diode forward voltage

I = 150 A, V = 0 V, T = 25 °C

2.5

I = 150 A, V = 0 V, T = 125 °C

1.8

Reverse recovery time

I = 150 A, V = -600 V, V = 0 V

µs

µC

di /dt = -1500 A/µs, T = 125 °C

0.4

Reverse recovery charge

I = 150 A, V = -600 V, V = 0 V

di /dt = -1500 A/µs

T = 25 °C

T = 125 °C

Nov-24-1997

1 234 5

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