是否Rohs认证: | 不符合 | 生命周期: | Active |
零件包装代码: | DO-41 | 包装说明: | O-LALF-W2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.69 | Is Samacsys: | N |
最小击穿电压: | 64.4 V | 外壳连接: | ISOLATED |
最大钳位电压: | 101.7 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-204AL | JESD-30 代码: | O-LALF-W2 |
JESD-609代码: | e0 | 最大非重复峰值反向功率耗散: | 4000 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 200 °C | 最低工作温度: | -65 °C |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 1.5 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 58 V |
最大反向电流: | 1 µA | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
14KESD58AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 4000W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
14KESD58ATR | MICROSEMI |
获取价格 |
Transient Suppressor, | |
14KESD58CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 4000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
14KESD58CAE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 4000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
14KESD58CATRE3 | MICROSEMI |
获取价格 |
Transient Suppressor, | |
14KESD58CE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 4000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
14KESD58E3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 4000W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
14KESD58E3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 4000W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
14KESD58TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 4000W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
14KESD58TRE3 | MICROSEMI |
获取价格 |
Transient Suppressor, |