是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DO-41 | 包装说明: | HERMETIC SEALED, GLASS, DO-41, 2 PIN |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.78 | 最小击穿电压: | 64.4 V |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-204AL | JESD-30 代码: | O-LALF-W2 |
JESD-609代码: | e0 | 最大非重复峰值反向功率耗散: | 4000 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 1.5 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 58 V |
表面贴装: | NO | 技术: | AVALANCHE |
端子面层: | TIN LEAD | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
14KESD58CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 4000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
14KESD58CAE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 4000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
14KESD58CATRE3 | MICROSEMI |
获取价格 |
Transient Suppressor, | |
14KESD58CE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 4000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
14KESD58E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 4000W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
14KESD58E3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 4000W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
14KESD58TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 4000W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
14KESD58TRE3 | MICROSEMI |
获取价格 |
Transient Suppressor, | |
14KESD6.0 | MICROSEMI |
获取价格 |
AXIAL-LEAD TVS | |
14KESD6.0A | MICROSEMI |
获取价格 |
AXIAL-LEAD TVS |