Datasheet > 14KESD6.0E3

14KESD6.0E3

更新时间： 2024-11-24 10:44:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	168K
描述
Trans Voltage Suppressor Diode, 4000W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, HERMETIC SEALED, GLASS, DO-41, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

14KESD6.0E3 数据手册

14KESD5.0 thru 14KESD170CA, e3

AXIAL-LEAD TVS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These small axial-leaded TVS devices feature the ability to clamp

dangerous high voltage, short-term transients such as produced by directed

or radiated electrostatic discharge phenomena before entering sensitive

component regions of a circuit design. They are small economical transient

voltage suppressors targeted primarily for short-term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as illustrated in Figure #1.

DO-41

(DO-204AL)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Excellent protection in clamping direct ESD level

transients in excess of 40,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

Absorbs ESD level transients* of 14,000 Watts per MIL-

STD-750, Method 1020 (approximately 150 ns

exponential wave, or one microsecond transients up to

4000 watts. See Figure #1 and #2 for overall transient

Peak Pulse Power.

•

Minimal capacitance (See Figure #3)

Flexible axial-lead mounting terminals

Bidirectional features available by adding a “C” or

“CA” suffix

•

Clamps Transients in less than 100 picoseconds

Working Stand-off Voltage range of 5V to 170V

Hermetic DO-41 Package. Also available in surface

mount DO-213AB MELF package (see separate data

sheet)

•

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

4000 Watts for One Microsecond Square Wave or

14,000 watts per ESD Wave form of MIL-STD-750,

method 1020.

•

CASE: Hermetically sealed axial-lead glass DO-41

(DO-204AL) package

•

FINISH: Tin-lead or RoHS compliant matte-Tin

plating solderable per MIL-STD-750, method 2026

•

See Surge Rating curve in Figures #1 and 2.

Operating and storage temperature –65^oC to 175^oC

•

POLARITY: Banded end is cathode

WEIGHT: 0.378 grams (typical)

MARKING: Part number

THERMAL RESISTANCE: Less than 83^oC/Watt

junction to lead at 0.375 inches from body.

•

DC power dissipation 1500 mW at T_L= 75^oC at 3/8

inch (10 mm) lead length from body.

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

Derate at 22.8 W/^oC above 25^oC for P_PP(1μs) and

•

See package dimension on last page

at 15 mW/^oC above 75^oC for dc power.

Forward Surge Current 500 amps for 1μs at T_L=

25^oC (rise time > 100 ns).

6-8-2007 REV C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与14KESD6.0E3相关器件

型号	品牌	获取价格	描述	数据表
14KESD6.0E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
14KESD6.0TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
14KESD6.0TRE3	MICROSEMI	获取价格	Transient Suppressor,
14KESD6.5	MICROSEMI	获取价格	AXIAL-LEAD TVS
14KESD6.5A	MICROSEMI	获取价格	AXIAL-LEAD TVS
14KESD6.5AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
14KESD6.5ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
14KESD6.5C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
14KESD6.5CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
14KESD6.5CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-

与14KESD6.0E3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

14KESD6.0E3

14KESD6.0E3 数据手册

与14KESD6.0E3相关器件

与14KESD6.0E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

14KESD6.0E3

14KESD6.0E3 数据手册

与14KESD6.0E3相关器件

与14KESD6.0E3相关文章

您还可以找

您在本页遇到什么问题？