Datasheet > 12N60G

12N60G

更新时间： 2024-11-02 01:07:47

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
8页	2488K
描述
N-CHANNEL POWER MOSFET

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12N60G 数据手册

12N60 Series

N-CHANNEL POWER MOSFET

Features

R_DS(ON)<0.80Ω @ V_GS=10V

●

Fast switching capability

Low gate charge

Lead free in compliance with EU RoHS directive.

Green molding compound

Pin Definition:

Mechanical Data

1. Gate

2. Drain

●

Case: TO-220,ITO-220,TO-262,TO-263 Package

3. Source

Block Diagram

Ordering Information

Package

Part No.

Packing

TO-220

ITO-220

TO-262

TO-263

50pcs / Tube

12N60T

12N60F

12N60K

12N60G

T_A= 25ꢀC unless otherwise specified

Maximum Ratings

PARAMETER

SYMBOL

RATINGS

600

UNIT

Drain-Source Voltage

V_DSS

±30

Gate-Source Voltage

V_GSS

I_D

Continuous Drain Current

Pulsed Drain Current (Note 2)

I_DM

Avalanche Energy

Power Dissipation

Single Pulsed (Note 3)

E_AS

790

225

TO-220/TO-262/TO-263

P_D

ITO-220

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

°C

T_OPR

T_STG

-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by T_J

3. L = 30mH, I_AS= 7.1A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

12 3 4 5 6 7 8

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