11EQS06

更新时间： 2024-11-01 23:13:19

品牌	Logo	应用领域
NIEC		整流二极管
页数	文件大小	规格书
2页	27K
描述
Low Forward Voltage drop Diode

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中文翻译

获取价格

数据手册

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11EQS06 数据手册

SBD Type :11EQS06

OUTLINE DRAWING

FEATURES

* Miniature Size

* Low Forward Voltage Drop

* High Surge Capability

* 30volts trough 100volts Types Available

* 26mm and 52mm Inside Tape Spacing Package Available

Maximum Ratings

Approx Net Weight:0.17g

11EQS06

Symbol

Unit

Rating

Repetitive Peak Reverse Voltage

Non-repetitive Peak Reverse Voltage

Without Fin or

V_RRM

V_RSM

0.8 Ta=28°C

1.0 Ta=29°C

Average Rectified

Output Current

P.C.Board

Mounted *

I_O

Half Sine Wave Resistive Load

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

I_F(RMS)

I_FSM

Tjw

1.57

°C

25 Half Sine Wave,1cycle,Non-repetitive

- 40 to + 150

Tstg

- 40 to + 150

Electrical • Thermal Characteristics

Symbol

Conditions

Min Typ Max

Unit

Characteristics

Peak Reverse Current

Peak Forward Voltage

I_RM

V_FM

Tj= 25°C, V_RM= V_RRM

Tj= 25°C, I_FM= 1 A

Without Fin or P.C.Board

P.C.Board mounted *

0.58

140

110

Thermal Resistance(Junction to Ambient) Rth(j-a)

* :Print Lands = 5x5 mm,Both Sides

°C/W

中文翻译

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与11EQS06相关器件

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11EQS06_2015	NI	获取价格	SBD
11EQS06TA1B2	NIEC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.8A, 60V V(RRM), Silicon,
11EQS06TA2B5	NIEC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.8A, 60V V(RRM), Silicon
11EQS09	NIEC	获取价格	SBD
11EQS09TA1B2	NIEC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon,
11EQS09TA2B5	NIEC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon,
11EQS10	NIEC	获取价格	SBD
11EQS10	SUNMATE	获取价格	1A Plug-in Schottky diode 100V R-1 series
11EQS10	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b