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11ES4

更新时间: 2024-09-17 22:08:51
品牌 Logo 应用领域
NIEC 二极管
页数 文件大小 规格书
2页 25K
描述
DIODE

11ES4 数据手册

 浏览型号11ES4的Datasheet PDF文件第2页 
DIODE Type : 11ES4  
FEATURES  
OUTLINE DRAWING  
* Miniature Size  
* Low Forward Voltage drop  
* Low Reverse Leakage Current  
* High Surge Capability  
* 26mm and 52mm Inside Tape Spacing Package  
Available  
Maximum Ratings  
Approx Net Weight:0.17g  
11ES4  
Symbol  
Unit  
Rating  
Repetitive Peak Reverse Voltage  
Non-repetitive Peak Reverse Voltage  
VRRM  
VRSM  
400  
600  
V
V
0.98  
1.0  
Ta=25°C *1  
Ta=50°C *2  
50Hz Half Sine  
Wave Resistive Load  
Average Rectified Output Current  
RMS Forward Current  
IO  
A
A
A
IF(RMS)  
IFSM  
1.57  
50Hz Half Sine Wave,1cycle,  
Non-repetitive  
Surge Forward Current  
45  
Operating JunctionTemperature Range  
Storage Temperature Range  
Tjw  
Tstg  
- 40 to + 150  
- 40 to + 150  
°C  
°C  
Electrical Thermal Characteristics  
Symbol  
Conditions  
Min. Typ. Max.  
Unit  
Characteristics  
Peak Reverse Current  
Peak Forward Voltage  
IRM  
VFM  
-
-
-
-
-
-
50  
1.0  
140  
110  
Tj= 25°C, VRM= VRRM  
Tj= 25°C, IFM= 1.0A  
µA  
V
*1  
*2  
Thermal Resistance  
Rth(j-a) Junction to Ambient  
°C/W  
*1:Without Fin or P.C. Board  
*2:P.C. Board Mounted (L=3mm,Print Land=5x5mm,Both Sides)  

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