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11ES1 PDF预览

11ES1

更新时间: 2024-09-18 06:21:59
品牌 Logo 应用领域
EIC 整流二极管
页数 文件大小 规格书
2页 32K
描述
SILICON RECTIFIER DIODES

11ES1 数据手册

 浏览型号11ES1的Datasheet PDF文件第2页 
SILICON RECTIFIER DIODES  
11ES1 - 11ES2  
DO - 41  
PRV : 100 - 200 Volts  
Io : 1.0 Ampere  
1.00 (25.4)  
0.107 (2.7)  
MIN.  
FEATURES :  
0.080 (2.0)  
* High current capability  
* High surge current capability  
* High reliability  
0.205 (5.2)  
0.166 (4.2)  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
1.00 (25.4)  
0.034 (0.86)  
MIN.  
0.028 (0.71)  
MECHANICAL DATA :  
* Case : DO-41 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.339 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL  
11ES1  
11ES2  
UNIT  
VRRM  
VRMS  
VDC  
IF  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
100  
70  
200  
140  
200  
Volts  
Volts  
Volts  
Amp.  
Amps.  
Volts  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Current Ta = 50°C  
Maximum Peak Forward Surge Current  
Maximum Forward Voltage at IF = 1.0 Amp.  
Maximum DC Reverse Current  
1.0  
45  
IFSM  
VF  
1.0  
IRM  
TJ  
at rated DC Blocking Voltage  
50  
mA  
°C  
°C  
Junction Temperature Range  
- 65 to + 175  
- 65 to + 175  
TSTG  
Storage Temperature Range  
Page 1 of 2  
Rev. 02 : March 25, 2005  

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