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10N65 PDF预览

10N65

更新时间: 2024-01-17 05:43:35
品牌 Logo 应用领域
森美特 - SUNMATE /
页数 文件大小 规格书
8页 2367K
描述
N-CHANNEL POWER MOSFET

10N65 数据手册

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10N65 Series  
N-CHANNEL POWER MOSFET  
Features  
Pin Definition:  
RDS(ON)<1@ VGS=10V  
1. Gate  
2. Drain  
3. Source  
Fast switching capability  
Low gate charge  
Lead free in compliance with EU RoHS directive.  
Green molding compound  
Mechanical Data  
Case: TO-220,ITO-220 Package  
Block Diagram  
D
Ordering Information  
Package  
Part No.  
10N65T  
10N65F  
10N65K  
10N65G  
Packing  
TO-220  
ITO-220  
TO-262  
TO-263  
50pcs / Tube  
50pcs / Tube  
50pcs / Tube  
50pcs / Tube  
G
S
TA = 25C unless otherwise specified  
Maximum Ratings  
PARAMETER  
SYMBOL  
RATINGS  
650  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDSS  
VGSS  
V
V
±30  
10  
A
A
ID  
Continuous Drain Current  
IDM  
38  
Pulsed Drain Current (Note 2)  
Single Pulsed (Note 3)  
608  
156  
50  
Avalanche Energy  
Power Dissipation  
EAS  
mJ  
W
TO-220/TO-262/TO-263  
PD  
ITO-220  
W
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
+150  
°C  
°C  
°C  
TOPR  
TSTG  
-55 ~ +150  
-55 ~ +150  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating : Pulse width limited by TJ  
3. L = 30mH, IAS = 6.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C  

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