Datasheet > 10N65G

10N65G

更新时间： 2024-11-30 01:07:47

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
8页	2367K
描述
N-CHANNEL POWER MOSFET

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数据手册

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10N65G 数据手册

10N65 Series

N-CHANNEL POWER MOSFET

Features

Pin Definition:

R_DS(ON)<1Ω @ V_GS=10V

●

1. Gate

2. Drain

3. Source

Fast switching capability

Low gate charge

Lead free in compliance with EU RoHS directive.

Green molding compound

Mechanical Data

●

Case: TO-220,ITO-220 Package

Block Diagram

Ordering Information

Package

Part No.

10N65T

10N65F

10N65K

10N65G

Packing

TO-220

ITO-220

TO-262

TO-263

50pcs / Tube

T_A= 25ꢀC unless otherwise specified

Maximum Ratings

PARAMETER

SYMBOL

RATINGS

650

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

±30

I_D

Continuous Drain Current

I_DM

Pulsed Drain Current (Note 2)

Single Pulsed (Note 3)

608

156

Avalanche Energy

Power Dissipation

E_AS

TO-220/TO-262/TO-263

P_D

ITO-220

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

°C

T_OPR

T_STG

-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by T_J

3. L = 30mH, I_AS= 6.2A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

12 3 4 5 6 7 8

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