Datasheet > 10N65H

10N65H

更新时间： 2024-11-30 01:14:11

品牌	Logo	应用领域
平伟 - PINGWEI		/
页数	文件大小	规格书
2页	193K
描述
F10A mps,650 Volts N-CHANNEL MOSFET

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10N65H 数据手册

10N65(F,B,H)

10A mps,650 Volts N-CHANNEL MOSFET

FEATURE



10A,650V,R_DS(ON)=0.85Ω@V_GS=10V/5A

Low gate charge

Low C_iss

Fast switching

TO-220AB

10N65

ITO-220AB

10N65F

100% avalanche tested

Improved dv/dt capability

TO-263

10N65B

TO-262

10N65H

Absolute Maximum Ratings(T_C=25℃,unless otherwise noted)

Parameter

Symbol

10N65

UNIT

Drain-Source Voltage

V_DSS

V_GSS

I_D

650

±30

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current(Note1)

I_DM

Single Pulse Avalanche Energy (Note 2)

Avalanche Current(Note1)

E_AS

300

I_AR

Repetitive Avalanche Energy (Note1)

Reverse Diode dV/dt (Note 3)

Operating Junction and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8"from case for 5 seconds

E_AR

V/ns

℃

dv/dt

T_J,T_STG

5.5

-55 to +150

T_L

260

℃

lbf·in

N·m

Mounting Torque

6-32 or M3 screw

1.1

Thermal Characteristics

TO-262

TO-263

Units

ITO-220

TO-220

Parameter

Symbol

Maximum Junction-to-Case

Maximum Power Dissipation

R_thJC

P_D

1.0

0.8

℃/W

T_C=25℃

125

155

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Rev. 14-1

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