Datasheet > 10N65F

10N65F

更新时间： 2024-01-14 14:39:34

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
4页	527K
描述
650V N-Channel Power MOSFET

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10N65F 数据手册

10N65F

650V N-Channel Power MOSFET

Features

◆10A, 650V, R_DS(on)=0.85 Ω@V_GS=10V

◆Fast Switching

◆Improved dv/dt capability

◆100% avalanche tested

◆Low gate charge

Application

◆Electronic Ballast

◆Electronic Transformer

◆Switching mode power supply

Absolute Maximum Ratings(Tc=25°C unless otherwise noted)

Symbol

Parameters

Value

Unit

VDSS

Drain-source Voltage

Gate-source Voltage

650

VGS

±30

--TC=25°C

Continuous Drain Current

Drain Current-Pulsed ①

Power Dissipation

--TC=100°C

5.8

IDM

P_D

--(TC = 25°C)

-- Derate above 25°C

4.8

W/°C

°C

T_j

Junction Temperature

150

-55-150

250

T_STG

E_AS

I_AR

Storage Temperature

Single Pulse Avalanche Energy②

Avalanche Current①

Thermal Characteristics

Min

Typ

Max

Unit

Symbol

Parameters

R_θJC

Thermal Resistance Junction-case

2.5

°C /W

R_θJA

Thermal Resistance Junction-ambient

62.5

°C /W

1 / 4

12 3 4

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10N65G-TF2-T	UTC	获取价格	N-CHANNEL MOSFET ARRAY FOR SWITCHING
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10N65G-TQ2-R	UTC	获取价格	10A, 650V N-CHANNEL POWER MOSFET
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