是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.92 | 外壳连接: | CATHODE |
配置: | COMMON CATHODE, 2 ELEMENTS | 二极管元件材料: | SILICON |
二极管类型: | ZENER DIODE | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 10 W |
认证状态: | Not Qualified | 标称参考电压: | 11 V |
表面贴装: | NO | 技术: | ZENER |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
最大电压容差: | 10% | 工作测试电流: | 230 mA |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
10EZ12 | MICROSEMI |
获取价格 |
Silicon 10 WATT Zener Diodes | |
10-EZ122PA016ME-LJ67F68T | VINCOTECH |
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High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET tech | |
10-EZ122PB032ME-PE07F18T | VINCOTECH |
获取价格 |
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET tech | |
10-EZ124PA016ME-LQ18F18T | VINCOTECH |
获取价格 |
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET tech | |
10-EZ124PA018MR-LR09F08T | VINCOTECH |
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Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode | |
10-EZ124PA032ME-LQ17F18T | VINCOTECH |
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High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET tech | |
10-EZ124RA010RO-LS06J88T | VINCOTECH |
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No diode recovery losses;Very fast switching | |
10-EZ124RA030RO-LS08J88T | VINCOTECH |
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No diode recovery losses;Very fast switching | |
10-EZ126PA015M7-L857F78T | VINCOTECH |
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IGBT M7 Easy paralleling Low turn-off losses Low collector emitter saturation voltage Pos | |
10-EZ126PA025M7-L858F78T | VINCOTECH |
获取价格 |
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem |