Datasheet > 10-EZ122PB032ME-PE07F18T

10-EZ122PB032ME-PE07F18T

更新时间： 2024-11-19 11:13:03

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	6918K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EZ122PB032ME-PE07F18T 数据手册

10-EZ122PB032ME-PE07F18T

datasheet

flowDUAL E1 SiC

1200 V / 32 mΩ

Topology features

flow E1 12 mm housing

● Temperature sensor

● Half Bridge

Component features

● High Blocking Voltage with low drain source on state resistance

● High speed SiC-MOSFET technology

● Resistant to Latch-up

Housing features

● Base isolation: Al₂O₃

● Convex shaped substrate for superior thermal contact

● Compact housing

● CTI600 housing material

● Thermo-mechanical push-and-pull force relief

● Press-fit pin

● Reliable cold welding connection

Schematic

Extra features

● equivalent: FF45MR12W1M1_B11

Target applications

● Charging Stations

● General

● Servo Drives

● UPS

Types

● 10-EZ122PB032ME-PE07F18T

07 Jul. 2022 / Revision 1

12 3 4 5 6 7...17

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