Datasheet > 10-EZ122PA016ME-LJ67F68T

10-EZ122PA016ME-LJ67F68T

更新时间： 2024-09-21 11:15:31

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	7460K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EZ122PA016ME-LJ67F68T 数据手册

10-EZ122PA016ME-LJ67F68T

datasheet

flowPHASE 1 SiC

1200 V / 16 mΩ

Features

flow E1 12 mm housing

● High frequency SiC MOSFET

● High power low inductive package

● Integrated NTC

Schematic

Target applications

● Charging Stations

● Industrial Drives

● Power Supply

Types

● 10-EZ122PA016ME-LJ67F68T

19 May. 2021 / Revision 1

12 3 4 5 6 7...17

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型号	品牌	获取价格	描述	数据表
10-EZ122PB032ME-PE07F18T	VINCOTECH	获取价格	High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET tech
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