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10-EZ126PB032ME-LS18F08T PDF预览

10-EZ126PB032ME-LS18F08T

更新时间: 2024-11-19 17:02:07
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
17页 6930K
描述
SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up

10-EZ126PB032ME-LS18F08T 数据手册

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10-EZ126PB032ME-LS18F08T  
datasheet  
flowPACK E1 SiC  
1200 V / 32 mΩ  
Topology features  
flow E1 12 mm housing  
● 3ph Inverter  
● Low and high side Kelvin Emitter for improved switching  
performance  
SiC MOSFET  
● Open Emitter configuration  
● Temperature sensor  
Component features  
● High Blocking Voltage with low drain source on state resistance  
● High speed SiC-MOSFET technology  
● Resistant to Latch-up  
Housing features  
● Base isolation: Al2O3  
● Convex shaped substrate for superior thermal contact  
● Compact housing  
Schematic  
● CTI600 housing material  
● Thermo-mechanical push-and-pull force relief  
● Press-fit pin  
● Reliable cold welding connection  
Target applications  
● Charging Stations  
● Elevator Drives  
● Embedded Drives  
● Servo Drives  
Types  
● 10-EZ126PB032ME-LS18F08T  
Copyright Vincotech  
1
12 Jan. 2024 / Revision 1  

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